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This project contains the design of two stage operational amplifier at 180nm Technology using gm over Id methodology for UGB 1GHz

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Design of Two-Stage Operational Amplifier at 180nm Technology

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Project Description

This project involves the design of a two-stage operational amplifier at 180nm technology using the GM over Id methodology. The amplifier is designed to meet the specifications: Gain > 60dB, load capacitance Cl = 20fF, gain bandwidth product (GBW) = 1GHz, and Phase margin > 50 degrees.

Table of Specifications

Specification Value
Gain > 60dB
Load Capacitance (Cl) 20fF
GBW 1GHz
Phase Margin > 50°

Design Details

Model and Methodology

  • Model File: CMOS180nm
  • Design Methodology: gm over ID methodology (Emphasis on optimized W/L ratio and Width/Length multiples of 0.18nm)

Prerequisites

Before designing, the following steps were taken:

  • Used Analog Designer Toolbox (ADT) for generating parameter charts using the CMOS180.txt model file.
  • ADT allows plotting various parameter charts for NMOS and PMOS devices, considering different specifications such as length, VDS, VSB, etc.

Tools Used

  • LTspice: Schematic and simulation purposes
  • ADT (Analog Designer Toolbox): Generating lookup tables for CMOS 180nm and parameter charts for GM over Id methodology
  • Electric Binary Software: Layout design

Calculations for the First Stage

  • Gain = 40 , "CL" =20f , Rout = 93 KΩ (Assumed after Back Calculations)
  • Let 𝐺𝑚= 𝐺𝑎𝑖𝑛/𝑅𝑜𝑢𝑡 = 0.43mS
  • Taking 𝐺𝑚/𝐼𝑑=12, Id = 0.43𝑚𝑆/12 = 35.83uA
  • For NMOS: (From Look Up Tables in ADT)
  • For 𝐺𝑚/𝐼𝑑=12, 𝐺𝑚/𝐺𝑑𝑠=77.05, 𝐼𝑑/𝑊=9.913 , Vgs=0.7316
  • Hence, Gds= 0.43𝑚𝑆/77.05 = 5.58uS W= 35.83𝑢/9.913 =3.6u and Vg =0.7316+0.45
  • and Vg = 1.18
  • For PMOS:
  • As, Rout = Ro(NMOS) || Ro(PMOS) Gds(PMOS)= 1/𝑅𝑂𝑈𝑇 - Gds(NMOS)
  • Hence , GDS(PMOS)= 5.172uS
  • Now, as the current will remain the same i.e 35.83uA
  • 𝐼𝑑/(𝐺𝑑𝑠(𝑃𝑀𝑂𝑆))= 35.83𝑢/5.17𝑢=6.93 using this From LUT in ADT(Analog Designer Toolbox), Gm/Id is calculated for PMOS
  • Hence , 𝐺𝑚/𝐼𝑑=5.487 Gm (PMOS) = 5.487 * 35.83uA = 0.196mS
  • For, 𝐺𝑚/𝐼𝑑=5.487 𝐼𝑑/𝑊=10.8 Vsg=0.781
  • Hence, W= 35.83𝑢/10.8 = 3.317 (Taken 3.24u)
  • And Vb = 1.8 – 0.781 = 1.019
  • AS CL=20f, BW (-3dB) = 𝐺𝑚/(2𝜋𝑅𝑜𝑢𝑡 𝐶𝐿)=85.56MHz

Calculations for Next Stage (Common Source using PMOS driver and Current Source Load)

  • Gain = 28, CL = 20f
  • Various calculations for PMOS and NMOS.
  • Gain = 28, "CL" =20f
  • For PMOS:
  • Taking 𝐺𝑚= 8 * 0.43mS = 3.44 mS
  • As, Av=Gm*Rout Rout = Av/Gm=8.139K
  • Vb(PMOS) = 1.0296 V Vsg=0.7704
  • From ADT, For Vsg =0.7704 Gm/Id is Calculated 𝐺𝑚/𝐼𝑑=5.658 Id=607.8U
  • Now, for the above Gm/Id 𝐺𝑚/𝐺𝑑𝑠=47.92, 𝐼𝑑/𝑊=10.51
  • Hence , Gds = 71.7uS W = 57.84u
  • For NMOS:
  • As, Rout = Ro(NMOS) || Ro(PMOS) Gds(NMOS)= 1/𝑅𝑂𝑈𝑇 - Gds(PMOS)
  • Hence , GDS(NMOS)= 48.5uS
  • Now, as the current will remain the same i.e 607.98uA
  • 𝐼𝑑/(𝐺𝑑𝑠(𝑁𝑀𝑂𝑆))=12.534 using this From LUT in ADT, Gm/Id is calculated for NMOS
  • Hence, 𝐺𝑚/𝐼𝑑=5.61 Gm (PMOS) = 5.61 * 607.98uA = 3.41mS
  • For, 𝐺𝑚/𝐼𝑑=5.61, 𝐼𝑑/𝑊=36.7, Vgs=0.7913
  • Hence, W= 16.56u

Schematic Pictures

First Stage Schematic image Second Stage Schematic image Two-Stage Operational Amplifier Schematic image

Simulation Pictures

Transfer Function image Transient Analysis image Frequency Response image

Simulation Results

image

Layout using Electric binary

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References

  • "The Gm/Id Design Methodology Demystified" by Dr. Hesham Omran
  • "CMOS Analog IC Design Lectures" by Dr. GS Javed
  • "The Design of TWO STAGE Miller OpAmp: Final Verdict" by Dr. Hesham Omran
  • NPTEL IIT Madras Course on OpAmp (Lecture 1, Lecture 2, Lecture 3)

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This project contains the design of two stage operational amplifier at 180nm Technology using gm over Id methodology for UGB 1GHz

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