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sdevice_des.cmd
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sdevice_des.cmd
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** Solar cell device file
File
{
**** INPUT FILES
* geometry, contacts, doping and mesh
Grid ="n1_msh.tdr"
* physical parameters
Parameter = "sdevice.par"
* IlluminationSpectrum= "@pwd@/spectrum/am15g_1.2um.txt"
* Import the optical generation input in the mesh file, created in the structure editor file (section optical generation profile)
OpticalGenerationInput= "n1_msh.tdr"
**** OUTPUT FILES
* to visualize distributed variables
Plot = "n1_light_des.tdr"
* to visualize electrical characteristics at the electrodes
Current= "n1_light_des.plt"
}
Electrode
{
* defines which contacts have to be treated as electrodes
* & initial boundary conditions
* obviously, electrode names must match the contact names of the
* sde_dvs.cmd file
{ name="em_contact" voltage=0.0 }
{ name="base_contact" voltage=0.0 }
}
Physics
{
Mobility (
DopingDependence
)
Recombination (
SRH
)
* Define area of the contacts (in um)
AreaFactor=2e7
* Use the optical generation file imported and added to the mesh in the Sentaurus structure Editor file
Optics(
OpticalGeneration(
ReadFromFile(
TimeDependence(
WaveTime= (1, 2)
WaveTSlope= 0.05
)
)
)
)
}
* Optics (
* OpticalGeneration (
* SetConstant (
* Value = 1e0
* )
* )
* )
*}
Plot{
OpticalGeneration
}
CurrentPlot{
OpticalGeneration(Integrate(Semiconductor) )
OpticalGeneration(Integrate(material="Silicon") )
}
Plot
{
* On-mesh-defined variables to be saved in the .tdr output file
*- Doping Profiles
Doping DonorConcentration AcceptorConcentration
*- Charge, field, potential and potential energy
SpaceCharge
ElectricField/Vector Potential
BandGap EffectiveBandGap BandGapNarrowing ElectronAffinity
ConductionBandEnergy ValenceBandEnergy
*- Carrier Densities:
EffectiveIntrinsicDensity IntrinsicDensity
eDensity hDensity
eQuasiFermiEnergy hQuasiFermiEnergy
*- Currents and current components:
eGradQuasiFermi/Vector hGradQuasiFermi/Vector
eMobility hMobility eVelocity hVelocity
Current/Vector eCurrent/Vector hCurrent/Vector
eDriftVelocity/Vector hDriftVelocity/Vector
*- SRH & interfacial traps
SRHrecombination
tSRHrecombination
*- Band2Band Tunneling & II
eBand2BandGeneration hBand2BandGeneration Band2BandGeneration
eAvalanche hAvalanche Avalanche
}
Math
{
* use previous two solutions (if any) to extrapolate next
Extrapolate
* use full derivatives in Newton method
Derivatives
* control on relative and absolute errors
-RelErrControl
* relative error= 10^(-Digits)
Digits=5
* absolute error
Error(electron)=1e8
Error(hole)=1e8
* numerical parameter for space-charge regions
eDrForceRefDens=1e10
hDrForceRefDens=1e10
* maximum number of iteration at each step
Iterations=20
* choosing the solver of the linear system
Method=ParDiSo
* display simulation time in 'human' units
Wallclock
* display max.error information
CNormPrint
* to avoid convergence problem when simulating defect-assisted tunneling
NoSRHperPotential
}
Solve
{
* EQUILIBRIUM
coupled {poisson}
* TURN-ON
* add a transient step to help solving due to the large amount of optical generated carriers
Transient (
InitialTime= 0 FinalTime= 1.2
*InitialStep= 1 MaxStep= 1 MinStep= 1e-5
) { Coupled {Poisson Electron Hole} }
* decreasing em_contact to goal
quasistationary (InitialStep = 0.010 MaxStep = 0.050 MinStep=0.005
Goal {name= "em_contact" voltage = -0.1}
plot { range=(0, 1) intervals=1 }
)
{coupled {poisson electron hole} }
* raising em_contact to goal
* negative part
quasistationary (InitialStep = 0.010 MaxStep = 0.050 MinStep=0.005
Goal {name= "em_contact" voltage = 0}
)
{coupled {poisson electron hole} }
quasistationary (InitialStep = 0.010 MaxStep = 0.050 MinStep=0.001
Goal {name= "em_contact" voltage = @V_stop@}
plot { range=(0, 1) intervals=1 }
)
{coupled {poisson electron hole} }
}