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nanocdte.bib
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@article{Kashchiev2006,
author = {Kashchiev, Dimo},
doi = {10.1021/cg050619i},
issn = {1528-7483},
journal = {Crystal Growth \& Design},
month = may,
number = {5},
pages = {1154--1156},
title = {{Dependence of the Growth Rate of Nanowires on the Nanowire Diameter}},
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@article{Wagner1964a,
author = {Wagner, R. S. and Ellis, W. C.},
doi = {10.1063/1.1753975},
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number = {5},
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title = {{Vapor-Liquid-Solid Mechanism of Single Crystal Growth}},
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@article{Xia2003,
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year = {2003}
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@article{Seifert2004a,
author = {Seifert, Werner and Borgstr\"{o}m, Magnus and Deppert, Knut and Dick, Kimberly a. and Johansson, Jonas and Larsson, Magnus W. and M\aa rtensson, Thomas and Sk\"{o}ld, Niklas and {Patrik T. Svensson}, C. and Wacaser, Brent a. and {Reine Wallenberg}, L. and Samuelson, Lars},
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issn = {00220248},
journal = {Journal of Crystal Growth},
keywords = {a1,a3,b2,metalorganic vapor phase epitaxy,nanostructures,semiconducting iii,v material},
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number = {1-4},
pages = {211--220},
title = {{Growth of one-dimensional nanostructures in MOVPE}},
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@article{Sporken2000,
author = {Sporken, R. and Grajewski, D. and Xin, Y. and Wiame, F. and Brill, G. and Boieriu, P. and Prociuk, a. and Rujirawat, S. and Dhar, N. K. and Sivananthan, S.},
doi = {10.1007/s11664-000-0221-2},
issn = {0361-5235},
journal = {Journal of Electronic Materials},
keywords = {cadmium telluride,heteroepitaxy,molecular beam epitaxy,selective growth,silicon},
month = jun,
number = {6},
pages = {760--764},
title = {{Selective epitaxy of cadmium telluride on silicon by MBE}},
volume = {29},
year = {2000}
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@article{Zhang2001a,
author = {Zhang, R. and Bhat, I.},
doi = {10.1007/s11664-001-0185-x},
issn = {0361-5235},
journal = {Journal of Electronic Materials},
keywords = {atomic force microscopy,cdte,epitaxial lateral overgrowth},
month = nov,
number = {11},
pages = {1370--1375},
title = {{Atomic force microscopy studies of CdTe films grown by epitaxial lateral overgrowth}},
volume = {30},
year = {2001}
}
@article{Noborisaka2005a,
author = {Noborisaka, Jinichiro and Motohisa, Junichi and Fukui, Takashi},
doi = {10.1063/1.1935038},
issn = {00036951},
journal = {Applied Physics Letters},
number = {21},
pages = {213102},
title = {{Catalyst-free growth of GaAs nanowires by selective-area metalorganic vapor-phase epitaxy}},
volume = {86},
year = {2005}
}
@article{Krishnamachari2004,
author = {Krishnamachari, U. and Borgstrom, M. and Ohlsson, B. J. and Panev, N. and Samuelson, L. and Seifert, W. and Larsson, M. W. and Wallenberg, L. R.},
doi = {10.1063/1.1784548},
issn = {00036951},
journal = {Applied Physics Letters},
number = {11},
pages = {2077},
title = {{Defect-free InP nanowires grown in [001] direction on InP (001)}},
volume = {85},
year = {2004}
}
@article{Tan2003a,
author = {Tan, Teh Y. and Li, Na and Gosele, Ulrich},
doi = {10.1063/1.1599984},
issn = {00036951},
journal = {Applied Physics Letters},
number = {6},
pages = {1199},
title = {{Is there a thermodynamic size limit of nanowires grown by the vapor-liquid-solid process?}},
volume = {83},
year = {2003}
}
@book{MassalskiTBMurrayJL1986,
address = {Metals Park, OH},
author = {{Massalski T B, Murray J L}, Bennett L H and Baker H},
booktitle = {Binary Alloy Phase Diagram},
publisher = {American Society for Metals},
title = {{Binary Alloy Phase Diagrams}},
year = {1986}
}
@article{Avramov2007,
author = {Avramov, Isak},
doi = {10.1007/s11671-007-9054-8},
issn = {1931-7573},
journal = {Nanoscale research letters},
keywords = {nanotubes \'{a} nanowires \'{a},nanowhiskers},
month = jan,
number = {5},
pages = {235--9},
pmid = {21801432},
title = {{Kinetics of growth of nanowhiskers (nanowires and nanotubes).}},
volume = {2},
year = {2007}
}
@article{Dubrovskii2007a,
author = {Dubrovskii, V.G. and Sibirev, N.V.},
doi = {10.1016/j.jcrysgro.2007.03.034},
issn = {00220248},
journal = {Journal of Crystal Growth},
keywords = {b1,growth mechanisms,nanowire},
month = jun,
number = {2},
pages = {504--513},
title = {{General form of the dependences of nanowire growth rate on the nanowire radius}},
volume = {304},
year = {2007}
}
@article{Martensson2007,
author = {M\aa rtensson, T. and Wagner, J. B. and Hilner, E. and Mikkelsen, a. and Thelander, C. and Stangl, J. and Ohlsson, B. J. and Gustafsson, a. and Lundgren, E. and Samuelson, L. and Seifert, W.},
doi = {10.1002/adma.200700285},
issn = {09359648},
journal = {Advanced Materials},
month = jul,
number = {14},
pages = {1801--1806},
title = {{Epitaxial Growth of Indium Arsenide Nanowires on Silicon Using Nucleation Templates Formed by Self-Assembled Organic Coatings}},
volume = {19},
year = {2007}
}
@article{Mikkelsen2005,
author = {Mikkelsen, a and Eriksson, J and Lundgren, E and Andersen, J N and Weissenreider, J and Seifert, W},
doi = {10.1088/0957-4484/16/10/060},
issn = {0957-4484},
journal = {Nanotechnology},
month = oct,
number = {10},
pages = {2354--2359},
title = {{The influence of lysine on InP(001) surface ordering and nanowire growth}},
volume = {16},
year = {2005}
}
@article{Watanabe1991a,
author = {Watanabe, Shunji},
doi = {10.1116/1.577283},
issn = {07342101},
journal = {Journal of Vacuum Science \& Technology A: Vacuum, Surfaces, and Films},
month = jul,
number = {4},
pages = {2394},
title = {{Cleaning the surface of SrTiO3(100) and LaAlO3(100) under moderate temperature condition by Bi adsorption/desorption treatment}},
volume = {9},
year = {1991}
}
@article{Kim2006c,
author = {Kim, Yong-Jin and Lee, Chul-Ho and Hong, Young Joon and Yi, Gyu-Chul and Kim, Sung Soo and Cheong, Hyeonsik},
doi = {10.1063/1.2364162},
issn = {00036951},
journal = {Applied Physics Letters},
number = {16},
pages = {163128},
title = {{Controlled selective growth of ZnO nanorod and microrod arrays on Si substrates by a wet chemical method}},
volume = {89},
year = {2006}
}
@article{Wang2005,
abstract = {The universal models of nucleation thermodynamics and growth kinetics were established for nanowire growth upon metal-catalyst-assisted thermal chemical vapor transport on the basis of vapor-liquid-solid (VLS) mechanism. The thermodynamic and kinetic size limit of nanowire growth was deduced from the proposed model. Theoretical predictions are in agreement with experimental data.},
author = {Wang, Cheng-Xin and Wang, Bing and Yang, Yu-Hua and Yang, Guo-Wei},
doi = {10.1021/jp0445268},
issn = {1520-6106},
journal = {The journal of physical chemistry. B},
month = may,
number = {20},
pages = {9966--9},
pmid = {16852204},
title = {{Thermodynamic and kinetic size limit of nanowire growth.}},
volume = {109},
year = {2005}
}
@article{Law2004a,
author = {Law, Matt and Goldberger, Joshua and Yang, Peidong},
doi = {10.1146/annurev.matsci.34.040203.112300},
issn = {1531-7331},
journal = {Annual Review of Materials Research},
keywords = {and nanotubes exhibit novel,and possible,electronic and,heterostructure,i abstract semiconductor nanowires,of compo-,optical properties owing to,quantum confinement,quantum confinement effects in,their unique structural one-dimensionality,two dimensions,vapor-liquid-solid process,with a broad selection},
month = aug,
number = {1},
pages = {83--122},
title = {{Semiconductor Nanowires and Nanotubes}},
volume = {34},
year = {2004}
}
@article{Neretina2007b,
author = {Neretina, S and Hughes, R a and Britten, J F and Sochinskii, N V and Preston, J S and Mascher, P},
doi = {10.1088/0957-4484/18/27/275301},
issn = {0957-4484},
journal = {Nanotechnology},
month = jul,
number = {27},
pages = {275301},
title = {{Vertically aligned wurtzite CdTe nanowires derived from a catalytically driven growth mode}},
volume = {18},
year = {2007}
}
@article{Akabori2003,
author = {Akabori, Masashi and Takeda, Junichiro and Motohisa, Junichi and Fukui, Takashi},
doi = {10.1088/0957-4484/14/10/303},
issn = {0957-4484},
journal = {Nanotechnology},
month = oct,
number = {10},
pages = {1071--1074},
title = {{InGaAs nano-pillar array formation on partially masked InP(111)B by selective area metal-organic vapour phase epitaxial growth for two-dimensional photonic crystal application}},
volume = {14},
year = {2003}
}
@article{Plante2006a,
author = {Plante, M.C. and LaPierre, R.R.},
doi = {10.1016/j.jcrysgro.2005.10.024},
issn = {00220248},
journal = {Journal of Crystal Growth},
keywords = {a1,a3,b1,b2,molecular beam epitaxy,nanomaterials,nanostructures,nanowires,semiconducting gallium arsenide},
month = jan,
number = {2},
pages = {394--399},
title = {{Growth mechanisms of GaAs nanowires by gas source molecular beam epitaxy}},
volume = {286},
year = {2006}
}
@article{Raab2000a,
author = {Raab, a. and Springholz, G.},
doi = {10.1063/1.1323733},
issn = {00036951},
journal = {Applied Physics Letters},
number = {19},
pages = {2991},
title = {{Oswald ripening and shape transitions of self-assembled PbSe quantum dots on PbTe (111) during annealing}},
volume = {77},
year = {2000}
}
@article{Dubrovskii2005a,
author = {Dubrovskii, V. and Cirlin, G. and Soshnikov, I. and Tonkikh, a. and Sibirev, N. and Samsonenko, Yu. and Ustinov, V.},
doi = {10.1103/PhysRevB.71.205325},
issn = {1098-0121},
journal = {Physical Review B},
month = may,
number = {20},
pages = {205325},
title = {{Diffusion-induced growth of GaAs nanowhiskers during molecular beam epitaxy: Theory and experiment}},
volume = {71},
year = {2005}
}
@article{Poole2003a,
author = {Poole, P. J. and Lefebvre, J. and Fraser, J.},
doi = {10.1063/1.1608486},
issn = {00036951},
journal = {Applied Physics Letters},
number = {10},
pages = {2055},
title = {{Spatially controlled, nanoparticle-free growth of InP nanowires}},
volume = {83},
year = {2003}
}
@article{Ratsch2005a,
author = {Ratsch, C. and Garcia, J. and Caflisch, R. E.},
doi = {10.1063/1.2077851},
issn = {00036951},
journal = {Applied Physics Letters},
number = {14},
pages = {141901},
title = {{Influence of edge diffusion on the growth mode on vicinal surfaces}},
volume = {87},
year = {2005}
}
@article{Chen2006,
author = {Chen, Zhuo and Cao, Chuanbao},
doi = {10.1063/1.2193051},
issn = {00036951},
journal = {Applied Physics Letters},
number = {14},
pages = {143118},
title = {{Effect of size in nanowires grown by the vapor-liquid-solid mechanism}},
volume = {88},
year = {2006}
}
@article{Schubert2004a,
author = {Schubert, L. and Werner, P. and Zakharov, N. D. and Gerth, G. and Kolb, F. M. and Long, L. and Gosele, U. and Tan, T. Y.},
doi = {10.1063/1.1762701},
issn = {00036951},
journal = {Applied Physics Letters},
number = {24},
pages = {4968},
title = {{Silicon nanowhiskers grown on <111>Si substrates by molecular-beam epitaxy}},
volume = {84},
year = {2004}
}
@article{Li2003b,
author = {Li, B. Q. and Zuo, J. M.},
doi = {10.1063/1.1581341},
issn = {00218979},
journal = {Journal of Applied Physics},
number = {1},
pages = {743},
title = {{Self-assembly of epitaxial Ag nanoclusters on H-terminated Si(111) surfaces}},
volume = {94},
year = {2003}
}
@article{Wu2002,
author = {Wu, Yiying and Fan, Rong and Yang, Peidong},
doi = {10.1021/nl0156888},
issn = {1530-6984},
journal = {Nano Letters},
month = feb,
number = {2},
pages = {83--86},
title = {{Block-by-Block Growth of Single-Crystalline Si/SiGe Superlattice Nanowires}},
volume = {2},
year = {2002}
}
@article{Bhat2006a,
author = {Bhat, Ishwara and Zhang, Ruichao},
doi = {10.1007/s11664-006-0257-z},
issn = {0361-5235},
journal = {Journal of Electronic Materials},
keywords = {cdte,epitaxial lateral overgrowth,movpe,selective growth},
month = jun,
number = {6},
pages = {1293--1298},
title = {{Anisotropy in selective metalorganic vapor phase epitaxy of CdTe on GaAs and Si substrates}},
volume = {35},
year = {2006}
}